The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Sep. 30, 2005
Ali Keshavarzi, Portland, OR (US);
Fabrice Paillet, Hillsboro, OR (US);
Muhammad M. Khellah, Tigard, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Yibin YE, Portland, OR (US);
Stephen H. Tang, Pleasanton, CA (US);
Mohsen Alavi, Portland, OR (US);
Vivek K. DE, Beaverton, OR (US);
Ali Keshavarzi, Portland, OR (US);
Fabrice Paillet, Hillsboro, OR (US);
Muhammad M. Khellah, Tigard, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Yibin Ye, Portland, OR (US);
Stephen H. Tang, Pleasanton, CA (US);
Mohsen Alavi, Portland, OR (US);
Vivek K. De, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.