The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Sep. 09, 2004
Hyeoung-won Seo, Gyeonggi-do, KR;
Woun-suck Yang, Gyeonggi-do, KR;
Du-heon Song, Gyeonggi-do, KR;
Jae-man Youn, Seoul, KR;
Hyeoung-Won Seo, Gyeonggi-do, KR;
Woun-Suck Yang, Gyeonggi-do, KR;
Du-Heon Song, Gyeonggi-do, KR;
Jae-Man Youn, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A finFET device includes a semiconductor substrate having specific regions surrounded with a trench. The trench is filled with an insulating layer, and recess holes are formed within the specific regions such that channel fins are formed by raised portions of the semiconductor substrate on both sides of the recess holes. Gate lines are formed to overlie and extend across the channel fins. Source/drain regions are formed at both ends of the channel fins and connected by the channel fins. Other embodiments are described and claimed.