The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Jul. 13, 2005
Alexander Kadyshevitch, Hoddieen, IL;
Chris Talbot, Emerald Hills, CA (US);
Dmitry Shur, Holon, IL;
Andreas G. Hegedus, Burlingame, CA (US);
Alexander Kadyshevitch, Hoddieen, IL;
Chris Talbot, Emerald Hills, CA (US);
Dmitry Shur, Holon, IL;
Andreas G. Hegedus, Burlingame, CA (US);
Applied Materials, Israel, Ltd., Rehovot, IL;
Abstract
A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.