The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
May. 09, 2005
Thomas V. Meixner, Gilbert, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Jaynal A. Molla, Gilbert, AZ (US);
J. Jack Ren, Phoenix, AZ (US);
Richard G. Williams, Chandler, AZ (US);
Brian R. Butcher, Gilbert, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Thomas V. Meixner, Gilbert, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Jaynal A. Molla, Gilbert, AZ (US);
J. Jack Ren, Phoenix, AZ (US);
Richard G. Williams, Chandler, AZ (US);
Brian R. Butcher, Gilbert, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for fabricating a flux concentrating system () for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line () formed in a substrate () and forming a first material layer () overlying the bit line () and the substrate (). Etching is performed to form a trench () in the first material layer () and a cladding layer () is deposited in the trench (). A buffer material layer () is formed overlying the cladding layer () and a portion of the buffer material layer () and a portion of the cladding layer () is removed.