The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Jun. 10, 2005
Kouichi Matsushita, Yokohama, JP;
Kenichi Shimamoto, Komoro, JP;
Kazuhiro Koshio, Komoro, JP;
Kazuhiko Ishimoto, Komoro, JP;
Takayuki Tsutsui, Saku, JP;
Kouichi Matsushita, Yokohama, JP;
Kenichi Shimamoto, Komoro, JP;
Kazuhiro Koshio, Komoro, JP;
Kazuhiko Ishimoto, Komoro, JP;
Takayuki Tsutsui, Saku, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi Hybrid Network, Co., Ltd., Yokohama-shi, JP;
Abstract
An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.