The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Oct. 17, 2003
Kuei-wu Huang, Hsin-Chu, TW;
Ai-sen Liu, Hsinchu, TW;
Baw-ching Perng, Hsinchu, TW;
Ming-ta Lei, Hsin Chu, TW;
Wen-kai Wan, Hsin Chu, TW;
Cheng-chung Lin, Taipei, TW;
Yih-shung Lin, Taipei, TW;
Chia-hui Lin, Hsin-Chu, TW;
Kuei-Wu Huang, Hsin-Chu, TW;
Ai-Sen Liu, Hsinchu, TW;
Baw-Ching Perng, Hsinchu, TW;
Ming-Ta Lei, Hsin Chu, TW;
Wen-Kai Wan, Hsin Chu, TW;
Cheng-Chung Lin, Taipei, TW;
Yih-Shung Lin, Taipei, TW;
Chia-Hui Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A Cu damascene structure is formed where Cu diffusion barrier is formed by treating the top surface of the surrounding low-k interlayer dielectric with nitrogen or carbon containing medium to form a silicon nitride or silicon carbide diffusion barrier rather than capping the top surface of the Cu with metal diffusion barrier as is conventionally done.