The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Mar. 08, 2005
Son V. Nguyen, Yorktown Heights, NY (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Kensaku Ida, Wappingers Falls, NY (US);
Darryl D. Restaino, Modena, NY (US);
Son V. Nguyen, Yorktown Heights, NY (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Kensaku Ida, Wappingers Falls, NY (US);
Darryl D. Restaino, Modena, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Sony Corporation, Tokyo, JP;
Abstract
A low k dielectric stack having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of the films within the stack and without the need of subjecting the inventive dielectric stack to any post treatment steps. Specifically, the present invention provides a low k dielectric stack that comprises at least one low k dielectric material and at least one nanolayer present within the at least one low k dielectric material.