The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jan. 30, 2004
Applicants:
Franz Hofmann, Munich, DE;
Johannes Kretz, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Thomas Schulz, Austin, TX (US);
Inventors:
Franz Hofmann, Munich, DE;
Johannes Kretz, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Thomas Schulz, Austin, TX (US);
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fin field effect transistor having a substrate, a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. The source and drain regions are formed once the gate has been produced.