The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Aug. 30, 2005
Wei Cao, San Jose, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Cheng Horng, San Jose, CA (US);
Ruying Tong, Los Gatos, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Liubo Hong, San Jose, CA (US);
Wei Cao, San Jose, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
Cheng Horng, San Jose, CA (US);
Ruying Tong, Los Gatos, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Liubo Hong, San Jose, CA (US);
Magic Technologies, Inc., Milpitas, CA (US);
Abstract
A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.