The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jan. 04, 2005
Applicants:
Chao-hsiung Wang, Hsin-Chu, TW;
Li-shyue Lai, Jhube, TW;
Denny Tang, Saratoga, CA (US);
Wen-chen Lin, Hsin-Chu, TW;
Inventors:
Chao-Hsiung Wang, Hsin-Chu, TW;
Li-Shyue Lai, Jhube, TW;
Denny Tang, Saratoga, CA (US);
Wen-Chen Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a memory device including forming an electrode over a substrate, then forming a dielectric feature proximate a contact region of a sidewall of the electrode, and then forming a phase change feature proximate the contact region.
Wang, Chao-Hsiung. (2007). Phase change memory device and method of manufacturing (U.S. Patent No. 7265373). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7265373
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile