The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2007

Filed:

Jun. 30, 2005
Applicants:

Zhong Dong, San Jose, CA (US);

Tai-peng Lee, Milpitas, CA (US);

Inventors:

Zhong Dong, San Jose, CA (US);

Tai-Peng Lee, Milpitas, CA (US);

Assignee:

ProMOS Technologies Inc., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Chlorine is incorporated into pad oxide () formed on a silicon substrate () before the etch of substrate isolation trenches (). The chlorine enhances the rounding of the top corners (C) of the trenches when a silicon oxide liner () is thermally grown on the trench surfaces. A second silicon oxide liner () incorporating chlorine is deposited by CVD over the first liner (), and then a third liner () is thermally grown. The chlorine concentration in the second liner () and the thickness of the three liners () are controlled to improve the corner rounding without consuming too much of the active areas ().


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