The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2007

Filed:

Nov. 30, 2005
Applicants:

Tatehito Usui, Chiyoda, JP;

Motohiko Yoshigai, Hikari, JP;

Kazuhiro Jyouo, Kudamatsu, JP;

Tetsuo Ono, Iruma, JP;

Inventors:

Tatehito Usui, Chiyoda, JP;

Motohiko Yoshigai, Hikari, JP;

Kazuhiro Jyouo, Kudamatsu, JP;

Tetsuo Ono, Iruma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 9/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.


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