The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2007

Filed:

Apr. 29, 2004
Applicants:

Chien-hao Chen, Jhuangwei Township, Ylian County, TW;

Chia-lin Chen, Hsin-Chu, TW;

Tze Liang Lee, Hsin-Chu, TW;

Shih-chang Chen, Taoyuang, TW;

Ju-wang Hsu, Taipei, TW;

Inventors:

Chien-Hao Chen, Jhuangwei Township, Ylian County, TW;

Chia-Lin Chen, Hsin-Chu, TW;

Tze Liang Lee, Hsin-Chu, TW;

Shih-Chang Chen, Taoyuang, TW;

Ju-Wang Hsu, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of the gate, wherein the first and second layers have comparable wet etch rates of at least 10 Å per minute using the same etchant.


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