The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Sep. 10, 2004
Charles C. Kuo, Union City, CA (US);
Ilya Karpov, Santa Clara, CA (US);
Yudong Kim, Sunnyvale, CA (US);
Greg Atwood, San Jose, CA (US);
Charles C. Kuo, Union City, CA (US);
Ilya Karpov, Santa Clara, CA (US);
Yudong Kim, Sunnyvale, CA (US);
Greg Atwood, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.