Antifuse element and electrically redundant antifuse array for controlled rupture location

Abstract

An antifuse element () having end corners () of a gate electrode () positioned directly above an active area () or bottom electrode. The minimum programming voltage between the gate electrode () and the active area () creates a current path through an insulating layer () positioned therebetween. The high electric field created at the end corners () of the gate electrode () results in a breakdown and rupture of the insulating layer () at points directly beneath the end corners (). This localization of the insulating layer () at the corners () provides for lower post program resistance and variation, and faster programming at a lower programming power. The antifuse elements () when integrated into an array () provide for increased packing density. The array is fabricated to include multiple active areas () for individual antifuse element () programming or a common active area () for multi-element programming.