The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2007

Filed:

Mar. 30, 2005
Applicants:

Keng-chu Lin, Chaojhou Township, Pingtung County, TW;

Yi-chi Liao, Puli Township, Nantou County, TW;

Hung-chun Tsai, Hsinchu, TW;

Yung-cheng LU, Taipei, TW;

Hung-wen Su, Jhubei, TW;

Inventors:

Keng-Chu Lin, Chaojhou Township, Pingtung County, TW;

Yi-Chi Liao, Puli Township, Nantou County, TW;

Hung-Chun Tsai, Hsinchu, TW;

Yung-Cheng Lu, Taipei, TW;

Hung-Wen Su, Jhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.


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