The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Apr. 05, 2005
Bruce M. Green, Gilbert, AZ (US);
Olin L. Hartin, Chandler, AZ (US);
Ellen Y. Lan, Chandler, AZ (US);
Philip H. LI, Scottsdale, AZ (US);
Monte G. Miller, Phoenix, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Marcus R. Ray, Tempe, AZ (US);
Charles E. Weitzel, Mesa, AZ (US);
Bruce M. Green, Gilbert, AZ (US);
Olin L. Hartin, Chandler, AZ (US);
Ellen Y. Lan, Chandler, AZ (US);
Philip H. Li, Scottsdale, AZ (US);
Monte G. Miller, Phoenix, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Marcus R. Ray, Tempe, AZ (US);
Charles E. Weitzel, Mesa, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In one embodiment, a semiconductor device () includes a buffer layer () formed over a substrate (). An AlGaAs layer () is formed over the buffer layer () and has a first doped region () formed therein. An InGaAs channel layer () is formed over the AlGaAs layer (). An AlGaAs layer () is formed over the InGaAs channel layer (), and the AlGaAs layer () has a second doped region formed therein. A GaAs layer () having a first recess is formed over the AlGaAs layer (). A control electrode () is formed over the AlGaAs layer (). A doped GaAs layer () is formed over the undoped GaAs layer () and on opposite sides of the control electrode () and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device () maintains linear operation over a wide temperature range.