The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Mar. 16, 2005
Chien-mao Chen, Kaohsiung, TW;
Jun Xiu Liu, Taichung, TW;
Cuker Huang, Banciao, TW;
Chi-hsuen Chang, Hsinchu, TW;
Chien-Mao Chen, Kaohsiung, TW;
Jun Xiu Liu, Taichung, TW;
Cuker Huang, Banciao, TW;
Chi-Hsuen Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method is provided for forming at least three devices with different gate oxide thicknesses and different associated operating voltages, in the same integrated circuit device. The method includes forming a plurality of gate oxides with different thicknesses in high voltage and low voltage areas in the same integrated circuit device. A dry etching operation is used to remove the relatively thick gate oxide from the high voltage area using photoresist masking of the low voltage area and a hard mask in the high voltage area, to mask the gate oxide films. A wet etching procedure is then used to remove the gate oxide film from the low voltage areas. The hard mask may be formed over a polysilicon structure.