The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Jun. 03, 2005
Jung-ho Lee, Suwon-si, KR;
Jung-sik Choi, Seoul, KR;
Jun-hyun Cho, Suwon-si, KR;
Sang-mun Chon, Yonging-si, KR;
Jung-Ho Lee, Suwon-si, KR;
Jung-Sik Choi, Seoul, KR;
Jun-Hyun Cho, Suwon-si, KR;
Sang-Mun Chon, Yonging-si, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,M[L1]x[L2]ywhere M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.