The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Aug. 17, 2005
Trung Tri Doan, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-xuan Ping, Meridian, ID (US);
Lingyi A. Zheng, Boise, ID (US);
Trung Tri Doan, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Lingyi A. Zheng, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.