The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Nov. 12, 2003
Tai-chun Huang, Hsin-Chu, TW;
Chih-hsiang Yao, Hsin-Chu, TW;
Yih-hsiung Lin, Sanchung, TW;
Tien-i Bao, Hsin-Chu, TW;
Bi-trong Chen, Hsin-Chu, TW;
Yung-cheng LU, Taipei, TW;
Tai-Chun Huang, Hsin-Chu, TW;
Chih-Hsiang Yao, Hsin-Chu, TW;
Yih-Hsiung Lin, Sanchung, TW;
Tien-I Bao, Hsin-Chu, TW;
Bi-Trong Chen, Hsin-Chu, TW;
Yung-Cheng Lu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A structure for a multi-level interconnect inter-level dielectric layer (ILD), a method of manufacturing thereof, and a semiconductor device including the ILD layer. The ILD layer includes a first low-dielectric constant material sub-layer, and a second low-dielectric constant material sub-layer disposed over the first low-dielectric constant material sub-layer. The second low-dielectric constant material sub-layer has at least one different material property than the first low-dielectric constant material sub-layer. A third low-dielectric constant material sub-layer is disposed over the second low-dielectric constant material sub-layer, the third low-dielectric constant material sub-layer having at least one different material property than the second low-dielectric constant material sub-layer. The first, second and third low-dielectric constant materials sub-layers are preferably comprised of the same material, deposited continuously in one or more deposition chambers while the deposition conditions such as the gas flow rate, power, or gas species are adjusted or changed.