The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Oct. 17, 2005
Ellie Y Yieh, San Jose, CA (US);
Lung-tien Han, San Jose, CA (US);
Anchuan Wang, Fremont, CA (US);
Lin Zhang, San Jose, CA (US);
Ellie Y Yieh, San Jose, CA (US);
Lung-Tien Han, San Jose, CA (US);
Anchuan Wang, Fremont, CA (US);
Lin Zhang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.