The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Jun. 23, 2004
Pin-shyne Chin, Shinchu, TW;
Pin-Shyne Chin, Shinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a thin gate insulator layer comprises forming an active region surrounded by STI regions; forming a first insulator layer on the active device region; forming a patterned photoresist layer over the first insulator layer and a at least a portion of the STI regions; etching the first insulator layer to expose a portion of the active device region, wherein the photoresist layer substantially protects the STI regions during etching; forming a thin gate insulator layer on the exposed portion of the active device region, wherein said first insulator layer located on a remaining portion of said active device region is converted to a thicker second insulator layer; and forming a conductive gate structure overlying a first portion of the thin gate insulator layer while a second portion of the thin gate insulator layer not covered by the conductive gate structure is removed.