The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2007

Filed:

Apr. 18, 2005
Applicants:

Kuo-pang Tseng, Hsin-Chu, TW;

Lung-an Lee, Hsin-Chu, TW;

Yin-fu Huang, Hsin-Chu, TW;

Chih-chia Hsu, Hsin-Chu, TW;

Cheng-hsiung Lee, Hsin-Chu, TW;

Inventors:

Kuo-Pang Tseng, Hsin-Chu, TW;

Lung-An Lee, Hsin-Chu, TW;

Yin-Fu Huang, Hsin-Chu, TW;

Chih-Chia Hsu, Hsin-Chu, TW;

Cheng-Hsiung Lee, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A temporal protection layer is employed to a wafer backside for use of micro-electro-mechanical systems (MEMS). The formation of the temporal protection layer prevents the wafer backside from scratch in process of transferring system for IC manufacturers. With regard to low cost and easy forming and removing, an oxide layer is used as the temporal protection layer. The throughput and yield rate of the wafer production are improved by the use of the temporal protection layer.


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