The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Oct. 31, 2002
Applicants:
Chong-jen Huang, Sanchung, TW;
Hsin-huei Chen, Miaoli, TW;
Kuang-wen Liu, Nantou, TW;
Chih-hao Wang, Taoyuan, TW;
Jia-rong Chiou, Keelung, TW;
Inventors:
Chong-Jen Huang, Sanchung, TW;
Hsin-Huei Chen, Miaoli, TW;
Kuang-Wen Liu, Nantou, TW;
Chih-Hao Wang, Taoyuan, TW;
Jia-Rong Chiou, Keelung, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Stabilization of photolithography process parameters, the photomask being used, and the manufacturing method thereof is provided where a formal pattern layout is combined with a dummy pattern. A photomask is manufactured by utilizing the combined pattern layout so that density changes between the pattern structure layers of the multi-layer semiconductor integrated circuits are minimized.