The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Oct. 20, 2005
Jonathan G. Pabustan, San Lorenzo, CA (US);
Ben Sheen, Milpitas, CA (US);
Jonathan G. Pabustan, San Lorenzo, CA (US);
Ben Sheen, Milpitas, CA (US);
Silicon Storage Technology, Inc., Sunnyvale, CA (US);
Abstract
The present invention relates to a method of a programming a select non-volatile memory cell in a plurality of serially connected non-volatile memory cells with a serially connected select transistor. Each of the non-volatile memory cells has a control gate for receiving a programming voltage and the select transistor has a select gate for receiving a select voltage. The method comprises applying the programming voltage to the control gate of the select non-volatile memory cell in a program command sequence. The magnitude of the select voltage to the select gate of the select transistor within the program command sequence is then varied. The method can be applied to non-volatile cells in a NAND or NOR architecture.