The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Jan. 27, 2005
Andreas Walter, Egloffstein, DE;
Recai Sezi, Roettenbach, DE;
Reimund Engl, Nuremberg, DE;
Anna Maltenberger, Leutenbach, DE;
Joerg Schumann, Dresden, DE;
Thomas Weitz, Duerkheim, DE;
Andreas Walter, Egloffstein, DE;
Recai Sezi, Roettenbach, DE;
Reimund Engl, Nuremberg, DE;
Anna Maltenberger, Leutenbach, DE;
Joerg Schumann, Dresden, DE;
Thomas Weitz, Duerkheim, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising in which Rand R, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO, in which Rand R, Rand R, Rand Rtogether may form a ring, in which Rto R, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH, —N(alkyl), —N(aryl), —N(heteroaryl), —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO, A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.