The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Jun. 14, 2004
John Kouvetakis, Mesa, AZ (US);
Matthew Bauer, Hillsboro, OR (US);
John Tolle, Gilbert, AZ (US);
Candi Cook, Tempe, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Matthew Bauer, Hillsboro, OR (US);
John Tolle, Gilbert, AZ (US);
Candi Cook, Tempe, AZ (US);
Abstract
A process for is provided for synthesizing a compound having the formula E(GeH)wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeHBr and [CH)Si]E are combined under conditions whereby E(GeH)is obtained. The E(GeH)is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH)can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.