The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Feb. 09, 2005
Manfred Pröll, Dorfen, DE;
Johann Pfeiffer, Ottobrunn, DE;
Stephan Schröder, München, DE;
Arndt Gruber, München, DE;
Georg Erhard Eggers, München, DE;
Manfred Pröll, Dorfen, DE;
Johann Pfeiffer, Ottobrunn, DE;
Stephan Schröder, München, DE;
Arndt Gruber, München, DE;
Georg Erhard Eggers, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An integrated semiconductor memory including memory cells which can be driven via first and second word lines and can be replaced by redundant memory cells. In the first memory cell type, data can be stored corresponding to the data present at a data input terminal. In the memory cells of a second memory cell type, data can be stored inverted with respect to data present at the data input terminal. The integrated semiconductor memory includes a circuit for data inversion, wherein the data are written to a redundant memory cell, inverted with respect to the data present at the data input terminal if the defective memory cell and the redundant memory cell replacing it are situated in different word line strips of a bit line twist, and if the defective memory cell and the redundant memory cell replacing it are associated with different memory cell types.