The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

Jul. 01, 2004
Applicants:

Shinichi Sumida, Kawagoe, JP;

Haruhiko Komoriya, Kawagoe, JP;

Kazuhiko Maeda, Kawagoe, JP;

Inventors:

Shinichi Sumida, Kawagoe, JP;

Haruhiko Komoriya, Kawagoe, JP;

Kazuhiko Maeda, Kawagoe, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07D 305/14 (2006.01); C08G 65/22 (2006.01); C23F 1/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a fluorine-containing cyclic compound represented by general formula (1): wherein Rrepresents a halogen atom, and Rand Reach represents hydrogen or a hydrocarbon group. The above-mentioned hydrocarbon group is a straight-chain, branched or cyclic hydrocarbon group having 1 to 25 carbon atoms or an aromatic hydrocarbon group, and may contain a halogen atom, an oxygen atom, a nitrogen atom or a sulfur atom. Further, a fluorine-containing polymerizable monomer derived from the above-mentioned fluorine-containing cyclic compound, a fluorine-containing polymer compound obtained by polymerization or copolymerization using the above-mentioned compound or monomer, further a resist material and a pattern forming process using the above-mentioned polymer compound are also disclosed. According to the invention, there is provided the polymer compound suitable for a resist material having high transparency in a wide wavelength region from an ultraviolet region to a near-infrared light region, high adhesion to a substrate, film forming properties, high etching resistance and a high glass transition point at once, particularly for a photoresist material in a vacuum ultraviolet wavelength region. Further, the pattern forming process using the polymer compound is suitable for the formation of a high-resolution pattern form.


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