The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jan. 20, 2004
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Bruce B. Doris, Brewster, NY (US);
Romany Ghali, Linden, NJ (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Woo-hyeong Lee, Poughquag, NY (US);
Anita Madan, Danbury, CT (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Bruce B. Doris, Brewster, NY (US);
Romany Ghali, Linden, NJ (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Anita Madan, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile