The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Mar. 02, 2005
Hiroaki Ishimura, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Takahiro Abe, Hofu, JP;
Go Saito, Hikari, JP;
Motohiko Yoshigai, Hikari, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Takahiro Abe, Hofu, JP;
Go Saito, Hikari, JP;
Motohiko Yoshigai, Hikari, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.