The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2007

Filed:

Dec. 05, 2003
Applicants:

Luca G. Fasoli, San Jose, CA (US);

Roy E. Scheuerlein, Cupertino, CA (US);

En-hsing Chen, Sunnyvale, CA (US);

Sucheta Nallamothu, San Jose, CA (US);

Maitreyee Mahajani, Saratoga, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Inventors:

Luca G. Fasoli, San Jose, CA (US);

Roy E. Scheuerlein, Cupertino, CA (US);

En-Hsing Chen, Sunnyvale, CA (US);

Sucheta Nallamothu, San Jose, CA (US);

Maitreyee Mahajani, Saratoga, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Assignee:

Sandisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

An exemplary NAND string memory array includes at least one plane of memory cells, said memory cells comprising thin film modifiable conductance switch devices and which cells are arranged in a plurality of series-connected NAND strings, and NAND strings including a series select device at each end thereof. Another exemplary NAND string memory array includes a group of more than four adjacent NAND strings within the same memory block each associated with a respective global bit line not shared by the other NAND string of the group. Another exemplary NAND string memory array includes NAND strings on identical pitch as their respective global bit lines.


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