The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Apr. 09, 2004
Applicants:
Rong-hui Kao, Hsinchu, TW;
Chang-sheng Tsao, Taipei, TW;
Yen-ming Chen, Hsinchu, TW;
Lin-june Wu, Hsinchu, TW;
Inventors:
Rong-Hui Kao, Hsinchu, TW;
Chang-Sheng Tsao, Taipei, TW;
Yen-Ming Chen, Hsinchu, TW;
Lin-June Wu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.