The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Oct. 12, 2004
Applicants:
Kazuhide Hasebe, Tokyo, JP;
Atsushi Endoh, Tokyo, JP;
Daisuke Suzuki, Tokyo, JP;
Keisuke Suzuki, Tokyo, JP;
Inventors:
Kazuhide Hasebe, Tokyo, JP;
Atsushi Endoh, Tokyo, JP;
Daisuke Suzuki, Tokyo, JP;
Keisuke Suzuki, Tokyo, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.