The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Aug. 24, 2005
Applicant:
Kao-su Huang, Tainan Hsien, TW;
Inventor:
Kao-Su Huang, Tainan Hsien, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides an etching process for decreasing mask defect. The process comprises providing a substrate, and sequentially forming a thin film layer, a mask, and a photoresist on the surface of the substrate. Then the photoresist is trimmed by a bromide compound, and a first etching process is performed to transfer patterns from the photoresist to the mask. A strip process is performed to strip photoresist by mixing gases that include fluorine. Finally, a second etching process is performed to transfer the pattern from patterned mask to the thin film layer.