The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Mar. 16, 2005
Sunil Shanker, Sunnyvale, CA (US);
Sean Cox, Sunnyvale, CA (US);
Chi-i Lang, Sunnyvle, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Minh Anh Nguyen, San Jose, CA (US);
Ken Vo, San Jose, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Sunil Shanker, Sunnyvale, CA (US);
Sean Cox, Sunnyvale, CA (US);
Chi-I Lang, Sunnyvle, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Minh Anh Nguyen, San Jose, CA (US);
Ken Vo, San Jose, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile