The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Sep. 07, 2004
Qi Xiang, San Jose, CA (US);
Robert B. Ogle, San Jose, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Cyrus E. Tabery, Santa Clar, CA (US);
Bin Yu, Cupertino, CA (US);
Qi Xiang, San Jose, CA (US);
Robert B. Ogle, San Jose, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Cyrus E. Tabery, Santa Clar, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile