The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Apr. 23, 2004
Yutaka Takahashi, Esashi, JP;
Hitoshi Kato, Esashi, JP;
Katsutoshi Ishii, Shiroyama-Machi, JP;
Kazutoshi Miura, Shiroyama-Machi, JP;
Yutaka Takahashi, Esashi, JP;
Hitoshi Kato, Esashi, JP;
Katsutoshi Ishii, Shiroyama-Machi, JP;
Kazutoshi Miura, Shiroyama-Machi, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.