The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2007

Filed:

Jun. 10, 2003
Applicants:

Masakazu Sato, Fukushima, JP;

Masato Onishi, Fukushima, JP;

Inventors:

Masakazu Sato, Fukushima, JP;

Masato Onishi, Fukushima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a method of evaluating a shape of a semiconductor wafer comprising the steps of: measuring shape data of a semiconductor wafer by scanning a front surface and/or a back surface of the semiconductor wafer; calculating a differential profile through a differential process of the measured shape data; analyzing the obtained differential profile and obtaining a surface characteristic of the wafer, and; evaluating a shape of the semiconductor wafer. Thereby, there are provided a method of evaluating a shape of a semiconductor wafer and an apparatus for evaluating a shape thereof, wherein a shape of a semiconductor wafer, particularly a shape of a peripheral portion of the wafer, can be quantitatively evaluated from a viewpoint different from conventional SFQR etc., and the shape quality of the wafer can be accurately evaluated over a specification of a strict design rule.


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