The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2007

Filed:

Mar. 28, 2002
Applicants:

Koji Hashimoto, Kanagawa-ken, JP;

Soichi Inoue, Kanagawa-ken, JP;

Kazuhiro Takahata, Kanagawa-ken, JP;

Kei Yoshikawa, Kanagawa-ken, JP;

Inventors:

Koji Hashimoto, Kanagawa-ken, JP;

Soichi Inoue, Kanagawa-ken, JP;

Kazuhiro Takahata, Kanagawa-ken, JP;

Kei Yoshikawa, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); G03C 5/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resist pattern () is formed in a dimension of a limitation of an exposure resolution over a hard mask material film () over a work film (). The material film () is processed using the resist pattern () as a mask. A hard mask pattern () is thereby formed. Thereby a resist pattern (), over a non-selected region (), having an opening () through which a selection region () in the mask pattern is exposed is formed. Only the mask pattern () exposed through the opening () is slimmed by performing a selection etching, the work film () is etched by using the mask pattern (). A work film pattern () is thereby formed, which include a wide pattern section () of a dimension width of the limitation of the exposure resolution and a slimmed pattern section () of a dimension that is not more than the limitation of the exposure resolution.


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