The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Dec. 29, 2004
Chih-hao Wang, Hsin-Chu, TW;
Shang-chih Chen, Jiadong Township, Pingtung County, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Shang-Chih Chen, Jiadong Township, Pingtung County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A system and method for suppressing sub-oxide formation during the manufacturing of semiconductor devices (such as MOSFET transistor) with high-k gate dielectric is disclosed. In one example, the MOSFET transistor includes a gate structure including a high-k gate dielectric and a gate electrode. In this example, the gate structure is covered with a nitride layer that is used to prevent oxygen from entering the structure during processing, yet is sufficiently thin to be effectively transparent to the processing.