The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Sep. 15, 2003
Omer H. Dokumaci, Wappingers Falls, NY (US);
Bruce B. Doris, Brewster, NY (US);
Kathryn W. Guarini, Yorktown Heights, NY (US);
Suryanarayan G. Hegde, Hollowville, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Erin Catherine Jones, Corvallis, OR (US);
Omer H. Dokumaci, Wappingers Falls, NY (US);
Bruce B. Doris, Brewster, NY (US);
Kathryn W. Guarini, Yorktown Heights, NY (US);
Suryanarayan G. Hegde, Hollowville, NY (US);
MeiKei Ieong, Wappingers Falls, NY (US);
Erin Catherine Jones, Corvallis, OR (US);
International Busniess Machines Corporation, Armonk, NY (US);
Abstract
A double-gate transistor has front (upper) and back gates aligned laterally by a process of forming symmetric sidewalls in proximity to the front gate and then oxidizing the back gate electrode at a temperature of at least 1000 degrees for a time sufficient to relieve stress in the structure, the oxide penetrating from the side of the transistor body to thicken the back gate oxide on the outer edges, leaving an effective thickness of gate oxide at the center, aligned with the front gate electrode. Optionally, an angled implant from the sides of an oxide enhancing species encourages relatively thicker oxide in the outer implanted areas and an oxide-retarding implant across the transistor body retards oxidation in the vertical direction, thereby permitting increase of the lateral extent of the oxidation.