The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Dec. 01, 2003
Akira Nagai, Hitachi, JP;
Shuji Eguchi, Naka-gun, JP;
Masahiko Ogino, Hitachi, JP;
Masanori Segawa, Hitachi, JP;
Toshiak Ishii, Hitachi, JP;
Nobutake Tsuyuno, Hitachi, JP;
Hiroyoshi Kokaku, Hitachi, JP;
Rie Hattori, Hitachinaka, JP;
Makoto Morishima, Hitachi, JP;
Ichiro Anjoh, Koganei, JP;
Kunihiro Tsubosaki, Hino, JP;
Chuichi Miyazaki, Akishima, JP;
Makoto Kitano, Tsuchiura, JP;
Mamoru Mita, Hitachi, JP;
Norio Okabe, Hitachi, JP;
Akira Nagai, Hitachi, JP;
Shuji Eguchi, Naka-gun, JP;
Masahiko Ogino, Hitachi, JP;
Masanori Segawa, Hitachi, JP;
Toshiak Ishii, Hitachi, JP;
Nobutake Tsuyuno, Hitachi, JP;
Hiroyoshi Kokaku, Hitachi, JP;
Rie Hattori, Hitachinaka, JP;
Makoto Morishima, Hitachi, JP;
Ichiro Anjoh, Koganei, JP;
Kunihiro Tsubosaki, Hino, JP;
Chuichi Miyazaki, Akishima, JP;
Makoto Kitano, Tsuchiura, JP;
Mamoru Mita, Hitachi, JP;
Norio Okabe, Hitachi, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200–250° C.).