The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jan. 27, 2006
Neal R. Rueger, Boise, ID (US);
William Budge, Homedale, ID (US);
Weimin LI, Shanghai, CN;
Gurtej S. Sandhu, Boise, ID (US);
Neal R. Rueger, Boise, ID (US);
William Budge, Homedale, ID (US);
Weimin Li, Shanghai, CN;
Gurtej S. Sandhu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D, HD, DT, Tand TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing Hunder otherwise substantially identical conditions.