The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Nov. 19, 2004
Applicants:
Jinping Liu, Beacon, NY (US);
Hwa Weng Koh, Beacon, NY (US);
Dong Kyun Sohn, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Inventors:
Jinping Liu, Beacon, NY (US);
Hwa Weng Koh, Beacon, NY (US);
Dong Kyun Sohn, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A nitridation process is performed. An optional high temperature annealing step may be performed.