The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Apr. 22, 2003
Jing-cheng Lin, Hsinchu Country, TW;
Chao-hsien Peng, Hsinchu, TW;
Shau Lin Shue, Hsinchu, TW;
Mong Song Liang, Hsin-chu, TW;
Jing-Cheng Lin, Hsinchu Country, TW;
Chao-Hsien Peng, Hsinchu, TW;
Shau Lin Shue, Hsinchu, TW;
Mong Song Liang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A process for improving the adhesion between an underlying copper structure, and overlying materials and structures, has been developed. The process features formation of a tantalum nitride layer on a copper structure, wherein the copper structure is located in a damascene type opening. To obtain the maximum adhesion benefit the tantalum nitride layer is formed via an atomic deposition layer procedure, performed at specific deposition conditions. The adhesion between the underlying copper structure and overlying materials such as a silicon nitride etch stop layer, as well the adhesion between the lower level copper structure and overlying upper level metal interconnect structures, is improved as a result of the presence of the atomic layer deposited tantalum nitride layer.