The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2007

Filed:

Jun. 30, 2003
Applicants:

Anne E. Miller, Portland, OR (US);

Charles Poutasse, Lake Oswego, OR (US);

Inventors:

Anne E. Miller, Portland, OR (US);

Charles Poutasse, Lake Oswego, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C09G 1/04 (2006.01); B24B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Slurries and methods for the chemical mechanical polishing of high density copper interconnects in a low k ILD are presented. In a particular embodiment of the present invention, a slurry for polishing copper is formed by combining a surfactant comprising an alkyl ethoxy organic acid such as glycolic acid ethoxylate lauryl ether (GAELE), an abrasive such as silica, an oxidizing agent such as hydrogen peroxide, and a chelating buffer system such as citric acid and potassium citrate dissolved in the mixture. This slurry provides a very low incidence of bent line defects, a low erosion rate, and a low dishing rate on a substrate comprising high density copper interconnects in a low k ILD. Embodiments of methods of the present invention use the disclosed slurries.


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