The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Aug. 25, 2005
Jui-fang Chen, Tai-Chung Hsien, TW;
Cheng-hung Chang, Hsin-Chu Hsien, TW;
Chung-shih Shen, Hsin-Chu, TW;
Chung-jung Chen, Hsin-Chu, TW;
Jui-Fang Chen, Tai-Chung Hsien, TW;
Cheng-Hung Chang, Hsin-Chu Hsien, TW;
Chung-Shih Shen, Hsin-Chu, TW;
Chung-Jung Chen, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.