The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 10, 2004
Fwu-iuan Hshieh, Saratoga, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
Third Dimension (3D) Semiconductor, Inc., Tempe, AZ (US);
Abstract
A method of manufacturing a semiconductor device includes providing a substrate having first and second main surfaces. The substrate has a heavily doped region of a first conductivity at the second main surface and has a lightly doped region of the first conductivity at the first main surface. The method includes providing trenches and mesas in the substrate, implanting, at an angle, a dopant of the first conductivity into a sidewall of a mesa and implanting, at an angle, a dopant of a second conductivity into the mesa at another sidewall. The method includes oxidizing the sidewalls and bottoms of each trench and tops of the mesas to create a top oxide layer, etching back the top oxide layer to expose a portion of the mesa, depositing an oxide layer to cover the etched back top layer and mesa and planarizing the top surface of the device.